THE DISTRIBUTION OF Sb ATOMS IN δ-DOPED SILICON CRYSTAL

• 来源期刊: 物理学报（海外版）（英文版）
• 学科: 物理学
• 关键词: molecular beam epitaxy synchrotron radiation epitaxial layers the growth
• 年，卷（期）: 1998,（9）
• 页码范围: 695-702
• 页数: 8页
• 分类号: O4
• 语种: 英文

摘要

The distribution of Sb atoms in δ-doped silicon crystals grown by molecular beam epitaxy at different temperatures was measured using the technique of synchrotron radiation X-ray low angle reflection. The results indicate that the doped Sb atoms are distributed exponentially in the epitaxial layers, and the 1/e decay lengths are 0.45, 0.95 and 3.5 nm for the samples grown at temperatures of 250, 300 and 350 ℃, respectively. For samples grown at 400 ℃, the 1/e decay length of the Sb atomic distribution increases drastically because of the segregation of Sb atoms during the growth process.