RECTIFYING EFFECT OF POLYANILINE(PANI)/N-TYPE POROUS SILICONE HETEROJUNCTION

• 来源期刊: 高分子科学(英文版)
• 年，卷（期）: 1999,（1）
• 页码范围: 49-55
• 页数: 7页
• 语种: 英文

摘要

Heterojunctions between polyaniline (PANI) and n-type porous silicon (PS), Al/PS-PANI/Au cell,were fabricated, and the rectifying parameters of this heterojunction diode were measured as a function of the preparation conditions of PANI and PS, the electronic structure of PANI as well as cell structure. The rectifying parameters of Al/PS-PANI/Au cell were determined to be γ= 1.8×101～1.0×105 for the rectifying ratio at 3 V, n = 3～12 for the ideal factor, j0 = 8.0×10-5～5.6×10-2 mA/cm2 for the reversed saturated current density, and φb = 0.67～0.83 V for the barrier height, respectively. The best rectifying heterojunction diode made between PANI and n-type PS with higher rectifying factor (γ=1.0×105 at 3V ), output current (＞ 1500mA/cm2 at 3V) and lower ideal factor (n = 3.3) was obtained by preventing the oxidation of PS before evaporating Al electrode.