Influences of H+ Implantation on the Boron-Doped Synthesized by Chemical Vapor Deposition Diamond Films

• 来源期刊: 中国物理快报（英文版）
• 年，卷（期）: 2000,（9）
• 页码范围: 686-688
• 页数: 3页
• 语种: 英文

摘要

Diamond films (DF) were preliminarily B doped in situ during chemical vapor deposition. Subsequently, the films were implanted with 120keV H+ to dose of 5 × 1014 ～ 5 × 1016cm-2. After the implantation, the B doped DF become insulating and Raman measurements indicate that the implantation has amorphous carbon and graphite etched. It is known that the formation of H-B pairs plays an important pole in property changes. However, for larger dose cases, the electrical resistance of DF is influenced by radiation damage and/or non-diamond phases. In addition to them, annealing makes the specimens conducting again. This phenomenon maybe has potential for application in designing DF device.