A New Method for Thin Film Deposition－Faced Microwave Electron Cyclotron Resonance Plasma Sources Enhanced Direct-Current Magnetron Sputtering

• 来源期刊: 中国物理快报(英文版)
• 年，卷（期）: 2000,（8）
• 所属期刊栏目: Physics of gases, plasmas, and electric discharges
• 页码范围: 586-588
• 页数: 3页
• 语种: 英文

摘要

A new reactive magnetron sputtering system enhanced by the faced microwave electron cyclotron resonance plasma source was designed and amorphous CNx films has been prepared by using this system. The character ization of the films by interference microscopy, atomic force microscopy, and x-ray photoelectron spectroscopy shows that the deposition rate is strongly affected by the direct-current bias, and the films are composed by a single carbon nitride phase and the N/C ratio is 4:3.2, which is close to that of C3N4 (4:3).