1.5μm LUMINESCENCE CHARACTERISTIC OF ERBIUM IN B, P DOPED a-SiO:H FILMS

• 来源期刊: 中国物理(英文版)
• 关键词: erbium photoluminescence a-SiO:H boron and phosphorus co-doping
• 年，卷（期）: 2000,（10）
• 页码范围: 783-786
• 页数: 4页
• 语种: 英文

摘要

Hydrogenated amorphous silicon films co-doped with oxygen (O), boron (B) and phosphorus (P) were fabricated using PECVD technique. The erbium (Er) implanted samples were annealed in a N2 ambient by rapid thermal annealing. Strong photoluminescence (PL) spectra of these samples were observed at room temperature. The incorporation of O, B and P could not only enhance the PL intensity but also the thermal annealing temperature of the strongest PL intensity. It seems that the incorporation of B or P can decrease the grain boundary potential barriers thus leading to an easier movement of carriers and a stronger PL intensity. Temperature dependence of PL indicated the thermal quenching of Er-doped hydrogenated amorphous silicon is very weak.