Effects of Pt diffusion barrier layer on the interface reaction and electric properties of PZT film/Si ( 111 ) sample

• 来源期刊: 中国化学（英文版）
• 年，卷（期）: 2000,（3）
• 页码范围: 328-334
• 页数: 7页
• 语种: 英文

摘要

The effects of the Pt diffusion barrier layer on the interface diffusion and reaction, crystallization, dielectric and ferroelectric properties of the PZT/Si(111) sample have been studied using XPS, AES and XRD techniques. The results indicate that the Pt diffusion barrier layer between the PZT layer and the Si substrate prohibits the formation of TiCx, TiSix and SiO2 species in the PZT layer. The Pt barrier layer also completely interrupts the diffusion of Si from the Si substrate into the PZT layer and impedes the diffusion of oxygen from air to the Si substrate greatly. Although the Pt layer can not prevent completely the diffusion and reaction between oxygen and silicon, it can prevent the formation of a stable SiO2 interface layer on the interface of PZT/Si. The Pt layer reacts with silicon to form PtSix species on the interface of Pt/Si, which can intensify the chemical binding strength between the Pt layer and the Si substrate. To play a good role as a diffusion barrier layer, the Pt barrier layer must be not thinner than 140 nm. The existence of the Pt layer not only promotes the crystallization of PZT layer to form a perovskite phase but also improves dielectric and ferroelectric performances of the PZT layer.