Au/Ti/p-Diamond Ohmic Contacts Prepared by Radio-Frequency Sputtering

• 来源期刊: 中国物理快报（英文版）
• 年，卷（期）: 2000,（11）
• 页码范围: 827-828
• 页数: 2页
• 语种: 英文

摘要

The as-deposited Au/Ti/p-diamond contacts prepared by rf sputtering are ohmic. The ohmic characteristics of the contacts are improved after annealing. As for the as-deposited and annealed contacts, the specific contact resistivities of 2.886×10-3 and 2.040×10-4Ω.cm2 are obtained, respectively. The x-ray photoelectron spectroscopy analysis indicates that the titanium carbide formation occurs at the interface between titanium and the diamond substrate in the as-deposited state, and no TiO2 is observed.