Raman Scattering Study of PbSe Grown on (111) BaF2 Substrate

• 来源期刊: 中国物理快报(英文版)
• 年，卷（期）: 2000,（8）
• 所属期刊栏目: Condensed matter: electronic structure,
• 页码范围: 606-608
• 页数: 3页
• 语种: 英文

摘要

PbSe films were grown on (111)-oriented BaF2 substrates by using molecular beam epitaxy. High resolution x-ray diffraction characterization showed good crystalline quality of PbSe films. Both longitudinal optical phonon at 135cm-1 and transverse optical phonon at 47.6cm-1 were observed by Raman scattering measurements. The Raman tensor calculation demonstrates that both transverse-optical and longitudinal-optical (LO) phonons in PbSe crystal are Raman active on (111)-oriented surface, Furthermore, 2LO phonon at about 270cm-1 and polaron at about 800cm-1 in PbSe, were also observed. The observed Raman frequencies are in good agreement with theoretical calculations using point ion model.