Computational Analysis of the Vertical Bridgman Growth of Te Doped GaSb Under Microgravity

• 来源期刊: 中国物理快报（英文版）
• 年，卷（期）: 2000,（10）
• 所属期刊栏目: Cross-disciplinary physics and related
• 页码范围: 775-777
• 页数: 3页
• 语种: 英文

摘要

A transient analysis of Te doped GaSb melt growth process is performed using finite element method. The solute concentration at the growth interface increases with time because of k ＜ 1. The growth interface shape becomes a little flat at the beginning of the growth compared with the initial shape. Radial segregation occurs even under the μg condition. This segregation increases with the increase of gravity when gravity is small, and reaches a maximum at g = 10-3 for our system. PACS: 81.10.Mx, 61.72.Ss, 02.70.Dh