Binding Energy of Ionized-Donor-Bound Excitons in the GaAs-AlxGa1-xAs Quantum Wells

• 来源期刊: 中国物理快报（英文版）
• 年，卷（期）: 2000,（5）
• 所属期刊栏目: Condensed matter
• 页码范围: 358-359
• 页数: 2页
• 语种: 英文

摘要

The binding energy of an exciton bound to anionized donor impurity (D+, X) located at the center or the edgein GaAs-AlxGa1-xAs quantum wells is calculated variationally for the well width from 10 to 300 A by using atwo-parameter wave function, The theoretical results are discussed and compared with the previous experimentalresults.