Light-Induced Absorption in Nominally Pure Bismuth Silicon Oxide

• 来源期刊: 中国物理快报（英文版）
• 学科: 物理学
• 年，卷（期）: 2001,（12）
• 所属期刊栏目: ATOMIC AND MOLECULAR PHYSICS
• 页码范围: 1595-1597
• 页数: 3页
• 分类号: O4
• 语种: 英文

摘要

Light-induced absorption in the nominally pure bismuth silicon oxide is investigated experimentally and the result shows that it consists of transient and persistent parts. The experimental evidence is analysed based on the model of three groups of trap (donor) centres.