HOT-CARRIER GENERATION MECHANISM AND HOT-CARRIER EFFECT IMMUNITY IN DEEP-SUB-MICRON GROOVED-GATE PMOSFETS

• 来源期刊: 中国物理（英文版）
• 学科: 物理学
• 关键词: grooved-gate PMOSFETs mechanism of hot-carrier generation hot-carrier effect interface states
• 年，卷（期）: 2001,（3）
• 所属期刊栏目: GENERAL
• 页码范围: 189-193
• 页数: 5页
• 分类号: O4
• 语种: 英文

摘要

Based on the hydrodynamic energy transport model, immunity from the hot-carrier effect in deep-sub-micron grooved-gate p-channel metal-oxide-semiconductor field-effect transistors (PMOSFETs) is analysed. The results show that hot carriers generated in grooved-gate PMOSFETs are much smaller than those in planar ones, especially for the case of channel lengths lying in the deep-sub-micron and super deep-sub-micron regions. Then, the hot-carrier generation mechanism and the reason why grooved-gate MOS devices can suppress the hot-carrier effect are studied from the viewpoint of physical mechanisms occurring in devices. It is found that the highest hot-carrier generating rate is at a medium gate bias voltage in three stress areas, similar to conventional planar devices. In deep-sub-micron grooved- gate PMOSFETs, the hot-carrier injection gate current is still composed mainly of the hot-electron injection current, and the hole injection current becomes dominant only at an extremely high gate voltage. In order to investigate other influences of the hot-carrier effect on the device characteristics, the degradation of the device performance is studied for both grooved-gate and planar devices at different interface states. The results show that the drift of the device electrical performance induced by the interface states in grooved-gate MOSFETs is far larger than that in planar devices.