TRANSPORT PROPERTIES OF μc-Si:H FILMS PREPARED BY VERY HIGH HYDROGEN-DILUTED SILANE PLASMA

• 来源期刊: 中国物理(英文版)
• 学科: 物理学
• 关键词: Microcrystalline silicon conductivity mobility travelling wave method
• 年，卷（期）: 2001,（8）
• 页码范围: 748-750
• 页数: 3页
• 分类号: O4
• 语种: 英文

摘要

Highly hydrogen-diluted silane plasma is used to fabricate microcrystalline silicon films in a plasma-enhanced chemical vapour deposition system. X-ray diffraction and micro-Raman scattering spectroscopy are utilized to characterize their microstructure properties. Dark conductivity and drift mobility are measured by the travelling wave method.With the decreasing gas flow ratio of silane-to-hydrogen from 2% to 0.2%, the crystalline volume fraction and the drift mobility increase at room temperature. Meanwhile, the dark conductivity increases initially and then decreases. The relationship between the microstructures and transport properties is discussed.