Heterostructure Intervalley Transferred Electron Effects

• 来源期刊: 中国物理快报（英文版）
• 学科: 物理学
• 年，卷（期）: 2001,（2）
• 页码范围: 263-265
• 页数: 3页
• 分类号: O4
• 语种: 英文

摘要

A Gunn active layer is used as an X electron probe to detect the X tunnelling current in the GaAs-AlAs heterostructure, from which a new heterostructure intervalley transferred electron (HITE) device is obtained. In the 8 mm band, the highest pulse output power of these diodes is 2.65 W and the highest conversion efficiency is 18%. The dc and rf performance of the HITE devices was simulated by the band mixing resonant tunnelling theory and Monte Carlo transport simulation. The HITE effect has transformed the transit-time dipole-layer mode in the Gunn diode into a relaxation oscillation mode in the HITE device. From the comparison of simulated results to the measured data, the HITE effect is demonstrated straightforwardly