Enhancement of Band Edge Emission from ZnS/Zn(OH)2 Quantum Dots

• 来源期刊: 中国物理快报（英文版）
• 学科: 物理学
• 年，卷（期）: 2001,（4）
• 所属期刊栏目: CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SC
• 页码范围: 616-618
• 页数: 3页
• 分类号: O4
• 语种: 英文

摘要

ZnS and Zn(OH)2 capped ZnS semiconductor quantum dots (QDs) have been synthesized by the colloidal chemicalmethod using inorganic reagents. Transmission electron microscopy·and electron diffraction results have shownthat the monodispersed ZnS QDs have a diameter of 1-5nm and the wurtzite structure. The polarities of the precursors and surfactant solvents have shown strong effects on the properties of the photoluminescence for ZnSQDs. For ZnS QDs capped with a wider band gap Zn(OH)2 shell, the surface trap states were passivated andhence the band-edge emissions have been enhanced.