GLOBAL EXISTENCE AND ASYMPTOTIC BEHAVIOR OF THE SOLUTION TO 1-D ENERGY TRANSPORT MODEL FOR SEMICONDUCTORS

• 来源期刊: 偏微分方程（英文版）
• 学科: 数学
• 关键词: energy transport model energy estimate global existence asymptotic behavior.
• 年，卷（期）: 2002,（4）
• 页码范围: 81-95
• 页数: 15页
• 分类号: O175.29.
• 语种: 英文

摘要

In this paper, we study the asymptotic behavior of global smooth solution to the initial boundary problem for the 1-D energy transport model in semiconductor science. We prove that the smooth solution of the problem converges to a stationary solution exponentially fast as t - ∞ when the initial data is a small perturbation of the stationary solution.