Reduction of insertion loss after annealing of silicon oxynitride optical waveguides

• 来源期刊: 中国物理（英文版）
• 学科: 物理学
• 关键词: SiON optical waveguide insertion loss annealing interface roughness
• 年，卷（期）: 2002,（1）
• 页码范围: 83-86
• 页数: 4页
• 分类号: O4
• 语种: 英文

摘要

The insertion losses of silicon oxynitride (SiON) waveguides have been measured in the 1550 nm wavelength region.The waveguide structure consisted of a 2.0μm SiON waveguide core with a refractive index of 1.50, a 0.5μm SiO2 uppercladding and a 5.0μm SiO2 lower cladding with a refractive index of 1.45. It was found that the wavelength-dependentinsertion losses of the waveguide were greatly reduced by annealing, and the loss was decreased more than 5.7 dB/cm at1550 nm after annealing at optimum conditions. The former was attributed to the reduction of the absorption caused by N-H and Si-H vibration modes, and the latter was due to the improvement of the interface roughness and homogeneity in the waveguides after annealing.