Range and Annealing Behaviour of Pb+ Ions Implanted into LiNbO3 Crystals at Moderate Energies

• 来源期刊: 中国物理快报（英文版）
• 学科: 物理学
• 年，卷（期）: 2002,（1）
• 页码范围: 101-104
• 页数: 4页
• 分类号: O4
• 语种: 英文

摘要

Pb+ ions have been implanted into LiNbO3 crystals in the energy range of 100-350keV at doses of 5 x 1015,1 × 1016 and 2 × 1016 ions/cm2. The profile of the implanted ions was measured by Rutherford backscattering. The mean projected range and the range straggling obtained from the experiment were compared with the TRIM'98and SRIM 2000 code. In the present case, the TRIM'98 code predicts experimental values better than those of the SRIM 2000 code. The depth distribution is also found to be independent of dose for 350kev Pb+ implanted into LiNbO3 crystals. After 800° C annealing for 60 min in ambient air, obvious diffusion occurs to the implanted Pb+ ions at 150 kev with a dose of 5 × 1015 ions/cm2. After a low-temperature treatment at 77K in liquid nitrogen, no obvious diffusion phenomenon occurs for the implanted Pb+ ions in LiNbO3.