Molecular dynamics simulation for the sputtering of an Al2O3 sample bombarded with MeV Si ions

• 来源期刊: 中国物理（英文版）
• 学科: 物理学
• 关键词: sputtering MD simulation kinetic energy distribution sputtering yield
• 年，卷（期）: 2002,（12）
• 页码范围: 1267-1271
• 页数: 5页
• 分类号: O4
• 语种: 英文

摘要

Sputtering yield and kinetic energy distribution (KED) of Al particles from an Al2Oa sample bombarded with 1-5 MeV Si ions have been simulated using the molecular dynamics method. These have also been measured experimentally with a conventional time-of-flight facility. In the simulation, a new interatomic potential specific to the Al2O3 target was developed, and both the nuclear energy loss Sn and electronic energy loss Se were taken into consideration. By carefully adjusting the simulation parameters, the simulated sputtering yields fit well with the experimental results, and the simulated KED of Al particles also fits roughly with the experimental KED after being modified theoretically.