MULTI-SCALE METHODS FOR INVERSE MODELING IN 1-D MOS CAPACITOR

• 来源期刊: 计算数学（英文版）
• 学科: 数学
• 关键词: Inverse problem MOS capacitor model Finite element method Adaptive moving mesh Levenberg-Marquardt method Sequence for optimization Multi-scale methods.
• 年，卷（期）: 2003,（1）
• 页码范围: 85-100
• 页数: 16页
• 分类号: O1
• 语种: 英文

摘要

In this paper, we investigate multi-scale methods for the inverse modeling in 1-D Metal-Oxide-Silicon (MOS) capacitor. First, the mathematical model of the device is given andthe numerical simulation for the forward problem of the model is implemented using finiteelement method with adaptive moving mesh. Then numerical analysis of these parametersin the model for the inverse problem is presented. Some matrix analysis tools are appliedto explore the parameters' sensitivities. And third, the parameters are extracted usingLevenberg-Marquardt optimization method. The essential difficulty arises from the effect ofmulti-scale physical difference of the parameters. We explore the relationship between theparameters' sensitivities and the sequence for optimization, which can seriously affect thefinal inverse modeling results. An optimal sequence can efficiently overcome the multi-scaleproblem of these parameters. Numerical experiments show the efficiency of the proposedmethods.