Theoretical investigation of incomplete ionization of dopants in uniform and ion-implanted 4H-SiC MESFETs

• 来源期刊: 中国物理（英文版）
• 学科: 物理学
• 关键词: silicon carbide ion implantation pinch-off voltage C-V characteristics
• 年，卷（期）: 2003,（1）
• 页码范围: 89-93
• 页数: 5页
• 分类号: O4
• 语种: 英文

摘要

The effects of incomplete ionization ofnitrogen in 4H-SiC have been investigated. Poisson's equation is numerically analysed by considering the effects of Poole-Frenkel, and the effects of the potential on Nd+ (the concentration of ionized donors) and n (the concentration of electrons). The pinch-off voltages of the uniform and the ion-implanted channels of 4H-SiC metal-semiconductor field-effect transistors (MESFETs) and the capacitance of the gate are given at different temperatures. Both the Poole-Frenkel effect and the potential have influence on the pinch-off voltage VP of 4H-SiC MESFETs. Although the C-V characteristics of the ion-implanted and the uniform channel of 4H-SiC MESFETs have a clear distinction, the effects of incomplete ionization on the C-V characteristics are not significant.