Defect Accumulation and Its Effect on Photoluminescence in GaN Bombarded with Low-energy Heavy Ions

• 作者: DuanJinglai HongChen MaHongji NieRui SongYin SunYoumei T.Shibayama YaoCunfeng ZhangChonghong
• 来源期刊: 近代物理研究所和兰州重离子加速器实验室年报：英文版
• 学科: 物理学
• 关键词: 光激发光 低能重离子 氮化镓 物理性质 短波光子学 能量光谱
• 年，卷（期）: 2003,（1）
• 页码范围: 61
• 页数: 1页
• 分类号: O433.2

摘要

Gallium Nitride (GaN) is an important material for the development of novel short-wave-length photonicdevices or high-frequency, high-power electronic devices. Ion implantation/irradiation was proved to be an effective method to modify the physical properties of the material. In the present work, we studied the dependence of damage accumulation on irradiation dose and temperature and the corresponding effects on photolumines cence character of the material. Specimens of GaN (n-type doping, (0001) on axis) were irradiated with ^56Fe+