Annealing characteristics of ultra-thin high-K HfO2 gate dielectrics

• 来源期刊: 中国物理（英文版）
• 关键词: annealing characteristics high-K HfO2 gate dielectrics
• 年，卷（期）: 2003,（3）
• 页码范围: 325-327
• 页数: 3页
• 语种: 英文

摘要

Ultra-thin HfO2 gate-dielectric films were fabricated by ion-beam sputtering a sintered HfO2 target and subsequently annealed at different temperatures and atmospheres. We have studied the capacitance-voltage, current-voltage,and breakdown characteristics of the gate dielectrics. The results show that electrical characteristics of HfO2 gate dielectric are related to the annealing temperature. With increase annealing temperature, the largest value of capacitance decreases, the equivalent oxide thickness increases, the leakage current reduces, and the breakdown voltage decreases.