Electron self-energy and effective mass in a single heterostructure

• 来源期刊: 中国物理(英文版)
• 关键词: semiconductors electron-phonon interactions
• 年，卷（期）: 2003,（11）
• 页码范围: 1296-1300
• 页数: 5页
• 语种: 英文

摘要

In this paper, we investigate the electron self-energy and effective mass in a single heterostructure using Greenfunction method. Numerical calculations of the electron self-energy and effective mass for GaAs/AlAs heterostructure are performed. The results show that the self-energy (effective mass) of electrons, which incorporate the energy of electron coupling to interface-optical phonons and half of the three-dimensional longitudinal optical phonons, increase (decrease) monotonically from that of interface polaron to that of the 3D bulk polaron with increasing the distance between the positions of the electron and interface.