Fabrication of Thermo-Optic Switch in Silicon-on-Insulator

• 来源期刊: 中国物理快报（英文版）
• 年，卷（期）: 2003,（12）
• 页码范围: 2185-2187
• 页数: 3页
• 语种: 英文

摘要

Silicon-on-insulator technology has been used to fabricate 2 × 2 thermo-optic switches. The switch shows crosstalk of-23.4 dB and extinction ratio of 18.1 dB in the bar-state. The switching speed is less than 30 μs and the power consumption is about 420mW. The measured excess loss is 1.8 dB. These merits make the switch more attractive for applications in wavelength division multiplexing.