A method to obtain ground state electroluminescence from 1.3μm emitting InAs/GaAs quantum dots grown by molecular beam epitaxy

• 来源期刊: 中国物理（英文版）
• 学科: 物理学
• 关键词: quantum dots electroluminescence state filling effect
• 年，卷（期）: 2003,（1）
• 页码范围: 97-99
• 页数: 3页
• 分类号: O4
• 语种: 英文

摘要

1.3μm emitting InAs/GaAs quantum dots (QDs) have been grown by molecular beam epitaxy and QD light emit ting diodes (LEDs) have been fabricated. In the electroluminescence spectra of QD LEDs, two clear peaks corresponding to the ground state emission and the excited state emission are observed. It was found that the ground state emission could be achieved by increasing the number of QDs contained in the active region because of the state filling effect.This work demonstrates a way to control and tune the emitting wavelength of QD LEDs and lasers.