Deposition of Er:Al2O3 Films and Photoluminescence Characteristics

• 来源期刊: 中国物理快报（英文版）
• 年，卷（期）: 2003,（9）
• 页码范围: 1613-1615
• 页数: 3页
• 语种: 英文

摘要

Er3+-doped Al2O3 films were deposited on silicon substrates by reactive closed-field unbalanced magnetron sputtering. The process parameters, such as target bias voltage, substrate bias voltage, O2 gas flows, sputtering gas pressure, were studied. The 1.53 tμm photoluminescence characteristicsfrom Er3+ were measured. The relations among the PL peak intensity, annealing temperatures, and pump power were experimentally investigated.