Damage Accumulation and Its Effect in Gallium Nitride Film by 208Pb27＋ Ions of 1.1 MeV/u

• 作者: Chen Hong Ma Hongji Nie Rui Song Yin Sun Youmei Wang Zhiguang Yao Cunfeng Zhang Chonghong Zhao Zhiming
• 来源期刊: 近代物理研究所和兰州重离子加速器实验室年报：英文版
• 学科: 工学
• 关键词: 光电子器件 离子束注入 氮化镓 薄膜效应 积累 损伤 设备技术 离子轰击
• 年，卷（期）: 2004,（1）
• 页码范围: 70-71
• 页数: 2页
• 分类号: TN15

摘要

<正>Gallium nitride (GaN) has received great attention because its outstanding properties are suitable for the development of novel microelectronic and optoelectronic devices. Ion beam implantation/engineering is an attractive method for device techniques such as selective-area doping or dry etching. The understanding of the damage production in GaN bombarded with energetic ions is fundamentally useful for the solution of such technical issues. Compared with low-energy ion irradiation, effects of swift heavy ions which induce intensive electronic excitation in GaN have been seldom investigated.