Raman properties of GaSb nanoparticles embedded in SiO2 films

• 来源期刊: 中国物理（英文版）
• 关键词: GaSb nanocrystals novel Raman properties phonon confinement and tensile stress effects
• 年，卷（期）: 2004,（12）
• 页码范围: 2169-2173
• 页数: 5页
• 语种: 英文

摘要

The Raman shifts of nanocrystalline GaSb excited by an Ar+ ion laser at wavelengths 514.5, 496.5, 488.0, 476.5,and 457.9nm are studied by an SPEX-1403 laser Raman spectrometer respectively, and they are explained by phonon confinement, tensile stress, resonant Raman scattering and quantum size effects. The Stokes and anti-Stokes Raman spectra of GaSb nanocrystals strongly support the Raman feature of GaSb nanocrystals. The calculated optical spectra compare well with experimental data on Raman scattering GaSb nanocrystals.