Influence of Growth Temperature and Trimethylindium Flow of InGaN Wells on Optical Properties of InGaN Multiple Quantum-Well Violet Light-Emitting Diodes

• 来源期刊: 中国物理快报（英文版）
• 年，卷（期）: 2004,（9）
• 页码范围: 1845-1847
• 页数: 3页
• 语种: 英文

摘要

An InGaN multiple-quantum-well (MQW) violet-light-emitting diode (LED) is grown by low-pressure metalorganic chemical vapour deposition. It is found that photoluminescence wavelength of the InGaN MQW violet LED is lengthened with increasing growth temperature and with the increasing trimethylindium flow of the InGaN wells. The electroluminescence peak wavelength of the violet LED are about 401 nm with full width at half maximum of 14nm, and the output power in injection current of 20mA at room temperature is 4.1 mW.