Electronic and Magnetic Properties of 3d Transition-Metal-Doped Ⅲ-Ⅴ Magnetic Semi conductor
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摘要:
A systematic study based on an ab initio calculation within a local spin density approximation is applied to material design of GaAs- and GaP-base doped by 3d transition metals. It is found that the ferromagnetic (FM) state is ready to achieve by V-, Cr- and Mn-doped GaP and GaAs.