Growth of a-Plane GaN Films on r-Plane Sapphire Substrates by Metalorganic Chemical Vapour Deposition

• 来源期刊: 中国物理快报（英文版）
• 年，卷（期）: 2004,（5）
• 页码范围: 970-971
• 页数: 2页
• 语种: 英文

摘要

Nonpolar a-plane GaN films were grown on r-plane sapphire substrates by metalorganic chemical vapour deposition (MOCVD) under various conditions. The surface morphologies of epitaxial films are studied by atomic force microscopy. The pit density and size both decrease with the increasing growth temperature, decreasing growth pressure or V/Ⅲ ratio, while the roughness of the surface increases. Formation mechanisms of the pits in the films are discussed.