SiC-Based p+nn+ Diode for Picosecond Semiconductor Closing Switch

• 来源期刊: 中国物理快报（英文版）
• 年，卷（期）: 2004,（11）
• 页码范围: 2305-2307
• 页数: 3页
• 语种: 英文

摘要

We study a SiC-based diode with a p+nn+ structure for picosecond semiconductor closing switch and discuss the physical process, which underlies the operation principle of high-power closing switch based on a delayed breakdown diode. By two-dimensional mixed device-circuit simulations, we demonstrate a single device reliably operated at 4kV and at risetime 11ps with high output dV/dt = 276 kV/ns, which is in good agreement with the experimental results.