Silicon-on-Insulating Multi-Layers for Total-Dose Irradiation Hardness

• 来源期刊: 中国物理快报（英文版）
• 年，卷（期）: 2004,（8）
• 页码范围: 1600-1603
• 页数: 4页
• 语种: 英文

摘要

Silicon-on-insulating multi-layer (SOIM) materials were fabricated by co-implantation of oxygen and nitrogen ions with different energies and doses. The multilayer microstructure was investigated by cross-sectional transmission electron microscopy. P-channel metal-oxide-semiconductor (PMOS) transistors and metal-semiconductorinsulator-semiconductor (MSIS) capacitors were produced by these materials.