Temperature- Dependent Barrier Characteristics of Inhomogeneous In/p-Si (100) Schottky Barrier Diodes

• 来源期刊: 中国物理快报（英文版）
• 年，卷（期）: 2004,（9）
• 页码范围: 1795-1798
• 页数: 4页
• 语种: 英文

摘要

The current-voltage (I- V) characteristics of In/p-Si Schottky barrier diodes have been determined in the temperature range 100-300 K and have been interpreted based on the assumption of a Gaussian distribution of barrier heights due to barrier height inhomogeneities that prevail at the metal-semiconductor interface. The evaluation of the experimental I-V data reveals a decrease of zero-bias barrier height but an increase of ideality factor n with decreasing temperature. The inhomogeneities are considered to have Gaussian distribution with a mean zero-bias barrier height of 0.630 e V and standard deviation of 0.083 V at zero bias. Furthermore, the mean barrier height and the Richardson constant values were obtained to be 0.617eV and 20.71 A K-2 cm-2, respectively, by means of the modified Richardson plot, ln( I0/T2) - (q2σs20/2k2T2) versus 1000/T.