Optical Properties of Highly Strained GaInAs/GaAs Quantum Wells Grown by Sb Assistance

• 来源期刊: 中国物理快报（英文版）
• 年，卷（期）: 2005,（8）
• 页码范围: 2088-2091
• 页数: 4页
• 语种: 英文

摘要

Optical properties of highly strained GaInAs/GaAs quantum wells (QWs) grown by molecular beam epitaxy with Sb assistance are investigated. The samples grown by Sb incorporation and Sb pre-deposition methodsdisplay high room-temperature photoluminescence (PL) intensity at extended long wavelength. This result is explained by the surfactant effects of Sb during the growth of GaInAs/GaAs QW systems. An abnormal S shaped temperature dependence of the PL peak position is found in the In0.42 Ga0.58As/GaAs triple QWs sample grown with Sb pre-deposition. By investigating the transmission electron microscope images and time-resolved PL spectra, it is found that the S-shaped temperature dependence of the PL peak position originates from the exciton localization effect brought by the Sb-rich clusters on the QW interface.