High Thermoelectric Properties of PbTe Doped with Bi2Te3 and Sb2Te3

• 来源期刊: 中国物理快报（英文版）
• 年，卷（期）: 2005,（8）
• 页码范围: 2103-2105
• 页数: 3页
• 语种: 英文

摘要

The composition-dependent thermoelectric properties of lead telluride (PbTe) doped with bismuth telluride(Bi2Te3), antimony telluride (Sb2Te3) and (BiSb)2Te3 have been studied at room temperature. All the samples exhibit small thermal conductivity. The figures of merit, 7.63, 1.03 and 8.97 × 10-4, have been obtained in PbTe with these dopants, respectively. These values are several times higher than those of PbTe containing other dopants with small grain sizes. The high thermoelectric performance is explained by electronic topological transition induced by alloying. The results indicate that these dopants are effective to enhance the thermoelectric performance of Pb Te.