Effect of the technology of implanting nitrogen into buried oxide on the radiation hardness of the top gate oxide for partially depleted SOI PMOSFET

• 来源期刊: 中国物理（英文版）
• 关键词: SOIPMOSFET radiation bardness nitrogen implantation threshold voltage shift
• 年，卷（期）: 2005,（3）
• 页码范围: 565-570
• 页数: 6页
• 语种: 英文

摘要

The effect of implanting nitrogen into buried oxide on the top gate oxide hardness against total irradiation does has been investigated with three nitrogen implantation doses(8×1015,2×1016 and 1×1017cm -2) for partially depleted SOI PMOSFET.The experimental results reveal the trend of negative shift of the thershold voltages of the studied transistors with the incerase of nitrogen implantation dose before irradition. After the irradiation with a total dose of 5×105 rad (Si)under a positive gate voltage of 2V,the threshold voltage shift of the transistors corresponding to the nitrogen implantation dose 8×1015cm -2 is smaller than that of the transistors without implantation.However, when the implantation dose reaches 2×1016 and 1×1017cm-2, for the majority of the tested transistors,their top gate oxide was badly damaged due to irratiation. In addition, the radiation also causes damage to the body -drain junctions of thetransistors with the gate oxide damaged.All the results can be interpreted by tracing back to the nitrogen implantation damage to the crystal lattices in the top silicon.