High Speed 2 × 2 Optical Switch in Silicon-on-Insulator Based on Plasma Dispersion Effect

• 来源期刊: 中国物理快报（英文版）
• 年，卷（期）: 2005,（12）
• 页码范围: 3097-3099
• 页数: 3页
• 语种: 英文

摘要

Based on free carrier plasma dispersion effect, a 2 × 2 optical switch is fabricated in a silicon-on-insulator substrate by inductively coupled-plasma technology and ion implantation. The device has a Mach-Zehnder interferometer structure, in which two directional couplers serve as the power splitter and combiner. The switch presents an insertion loss of 3.04 dB and a response time of 496ns.