N-Doped LaAlO3/Si(100) Films with High-k, Low-Leakage Current and Good Thermal Stability

• 来源期刊: 中国物理快报（英文版）
• 年，卷（期）: 2005,（1）
• 页码范围: 182-184
• 页数: 3页
• 语种: 英文

摘要

High quality amorphous N-doped LaAlO3 (LaAlON) films have been deposited on Si (100) in nitrogen gas by laser molecular beam epitaxy. The chemical nature and physical distribution of N in LaAlON films has been performed by x-ray photoemission spectroscopy. Compared with LaAlO3, a significant improvement in the interfacial quality and leakage current density was obtained by nitrogen additive. At gate voltage +1 V, the leakage current density of the LaAlON film with an equivalent oxide thickness as thin as 2nm is obtained to be 2.9 × 10-6 A/cm2,which decreases almost two orders of magnitude from that of LaAlO3 film with the same thickness. Moreover, high-resolution transmission electron microscope analysis show that the LaAlON sample is still amorphous with a very sharp interface between the LaAlON layer and the Si substrate after annealed at 900℃ for 60s.