A bistable, self-latching inverter by the monolithic integration of resonant tunnelling diode and high electron mobility transistor

• 来源期刊: 中国物理（英文版）
• 关键词: resonant tunnelling diode (RTD) high electron mobility transistor (HEMT) molecular beam epitaxy (MBE) bistability self-latching
• 年，卷（期）: 2006,（10）
• 页码范围: 2422-2426
• 页数: 5页
• 语种: 英文

摘要

This paper reports that the structures of A1GaAs/InGaAs high electron mobility transistor (HEMT) and AlAs/GaAs resonant tunnelling diode (RTD) are epitaxially grown by molecular beam epitaxy (MBE) in turn on a GaAs substrate. An A10.24Ga0.76As chair barrier layer, which is grown adjacent to the top AlAs barrier, helps to reduce the valley current of RTD. The peak-to-valley current ratio of fabricated RTD is 4.8 and the transconductance for the 1-μm gate HEMT is 125mS/mm. A static inverter which consists of two RTDs and a HEMT is designed and fabricated. Unlike a conventional CMOS inverter, the novel inverter exhibits self-latching property.