Nanoelectronic devices--resonant tunnelling diodes grown on InP substrates by molecular beam epitaxy with peak to valley current ratio of 17 at room temperature

• 来源期刊: 中国物理（英文版）
• 关键词: resonant tunnelling diode InP substrate molecular beam epitaxy high resolution trans mission electron microscope
• 年，卷（期）: 2006,（6）
• 页码范围: 1335-1338
• 页数: 4页
• 语种: 英文

摘要

This paper reports that InAs/In0.53Ga0.47As/AlAs resonant tunnelling diodes have been grown on InP substrates by molecular beam epitaxy. Peak to valley current ratio of these devices is 17 at 300K. A peak current density of 3kA/cm2 has been obtained for diodes with AlAs barriers of ten monolayers, and an In0.53Ga0.47As well of eight monolayers with four monolayers of InAs insert layer. The effects of growth interruption for smoothing potential barrier interfaces have been investigated by high resolution transmission electron microscope.