Influence of total gas flow rate on microcrystalline silicon films prepared by VHF-PECVD

• 来源期刊: 中国物理（英文版）
• 关键词: very high frequency plasma enhanced chemical vapour deposition intrinsic microcrystalline silicon gas flow rate
• 年，卷（期）: 2006,（5）
• 页码范围: 1110-1113
• 页数: 4页
• 语种: 英文

摘要

Hydrogenated microcrystalline silicon (μc-Si:H) films are fabricated by very high frequency plasma enhanced chemical vapour deposition (VHF-PECVD) at a silane concentration of 7% and a varying total gas flow rate (H2+SiH4).Relations between the total gas flow rate and the electrical and structural properties as well as deposition rate of the films are studied. The results indicate that with the total gas flow rate increasing the photosensitivity and deposition rate increase, but the crystalline volume fraction (Xc) and dark conductivity decrease. And the intensity of (220) peak first increases then decreases with the increase of the total gas flow rate. The cause for the changes in the structure and deposition rate of the films with the total gas flow rate is investigated using optical emission spectroscopy (OES).