Ti-Al based ohmic contacts to n-type 6H-SiC with P+ ion implantation

• 来源期刊: 中国物理（英文版）
• 关键词: ohmic contact silicon carbide specific contact resistance P+ ion implantation
• 年，卷（期）: 2006,（9）
• 页码范围: 2142-2145
• 页数: 4页
• 语种: 英文

摘要

The Ti-A1 ohmic contact to n-type 6H-SiC has been fabricated. An array of TLM (transfer length method) test patterns with Au/Ti/Al/Ti/SiC structure is formed on N-wells created by P+ ion implantation into Si-faced p-type 6H-SiC epilayer. The specific contact resistance pc as low as 8.64x 10-6Ω·cm2 is achieved after annealing in N2 at 900C for 5 min. The sheet resistance Rsh of the implanted layers is 975Ω/□. X-ray diffraction (XRD) analysis shows the formation of Ti3SiC2 at the metal/n-SiC interface after thermal annealing, which is responsible for the low resistance contact.