Growth and Magnetic Properties of Zincblende CrSb Epilayers on Relaxed and Strained (In, Ga)As Buffers

• 来源期刊: 中国物理快报（英文版）
• 年，卷（期）: 2006,（2）
• 页码范围: 493-496
• 页数: 4页
• 语种: 英文

摘要

Zincblende CrSb (zb-CrSb) layers with room-temperature ferromagnetism have been grown on relaxed and strained (In, Ga)As buffer layers epitaxially prepared on (001) GaAs substrates by molecular-beam epitaxy.