Influence of GaAsP Insertion Layers on Performance of InGaAsP/InGaP/AlGaAs Quantum-Well Laser

• 来源期刊: 中国物理快报（英文版）
• 年，卷（期）: 2006,（9）
• 页码范围: 2583-2586
• 页数: 4页
• 语种: 英文

摘要

We report on the use of very thin GaAsP insertion layers to improve the performance of an InGaAsP/InGaP/AlGaAs single quantum-well laser structure grown by metal organic chemical vapour deposition.