Effects of Substrate Temperature and Nitrogen Pressure on Growth of AlN Films by Pulsed Laser Deposition

• 来源期刊: 中国物理快报（英文版）
• 年，卷（期）: 2007,（2）
• 页码范围: 552-554
• 页数: 3页
• 语种: 英文

摘要

Highly oriented aluminium nitride (AlN) films are grown on p-Si (100) substrates by pulsed laser deposition,and their characteristics of structure and composition are studied by x-ray diffraction, Fourier transform infrared spectroscopy and scanning electron microscopy. The results show that the deposited films exhibit good crystalline The influences of substrate temperature and ambient nitrogen (N2) pressure on the crystallinity of AlN films are remarkable. At room temperature, when the ambient N2 pressure arises from 5 × 10-6 Pa to 5Pa, the crystallinity of the film becomes better. When the substrate temperature is 600℃, the film has the best crystallinity at 0.05 Pa.Furthermore, the effects of substrate temperature and ambient N2 pressure on the combination of Al-N bonds and surface morphology of AlN films are also studied.