MULTISTEP FINITE VOLUME APPROXIMATIONS TO THE TRANSIENT BEHAVIOR OF A SEMICONDUCTOR DEVICE ON GENERAL 2D OR 3D MESHES

• 来源期刊: 计算数学（英文版）
• 关键词: Semiconductor device Unstructured meshes Finite volume Multistep method,Error estimates
• 年，卷（期）: 2007,（4）
• 页码范围: 485-496
• 页数: 12页
• 语种: 英文

摘要

In this paper, we consider a hydrodynamic model of the semiconductor device. The approximate solutions are obtained by a mixed finite volume method for the potential equation and multistep upwind finite volume methods for the concentration equations.Error estimates in some discrete norms are derived under some regularity assumptions on the exact solutions.