Nonvolatile Memory Devices Based on Gold Nanoparticle and Poly (N-Vinylcarbazole) Composite

• 来源期刊: 中国物理快报（英文版）
• 年，卷（期）: 2007,（11）
• 页码范围: 3280-3282
• 页数: 3页
• 语种: 英文

摘要

A rewritable polymer memory device based on gold nanoparticle doped poly (N-vinylcarbazole) (PVK), which can be easily fabricated by simple spin coating, has been described. An electrical bistabie phenomenon is observed in the current-voltage characteristics of this device, and it is found that the electrical bistability is repeatable by proper writing voltage and erasing voltage. The unique behaviour of the devices provides an interesting approach such that doping nanoparticles in polymer can be used to realize high performance nonvolatile polymer memory devices.