Investigation of gate current in nano-scale MOSFETs by Monte Carlo solution of quantum Boltzmann equation

• 来源期刊: 中国物理（英文版）
• 关键词: tunnelling quantum effect Monte Carlo metal oxide semiconductor field effect transistor
• 年，卷（期）: 2007,（2）
• 页码范围: 537-541
• 页数: 5页
• 语种: 英文

摘要

This paper investigates gate current through ultra-thin gate oxide of nano-scale metal oxide semiconductor field effect transistors (MOSFETs), using two-dimensional (2D) full-band self-consistent ensemble Monte Carlo method based on solving quantum Boltzmann equation. Direct tunnelling, Fowler-Nordheim tunnelling and thermionic emission currents have been taken into account for the calculation of total gate current. The 2D effect on the gate current is investigated by including the details of the energy distribution for electron tunnelling through the barrier. In order to investigate the properties of nano scale MOSFETs, it is necessary to simulate gate tunnelling current in 2D including non-equilibrium transport.